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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">powder</journal-id><journal-title-group><journal-title xml:lang="ru">Известия вузов. Порошковая металлургия и функциональные покрытия</journal-title><trans-title-group xml:lang="en"><trans-title>Powder Metallurgy аnd Functional Coatings (Izvestiya Vuzov. Poroshkovaya Metallurgiya i Funktsional'nye Pokrytiya)</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1997-308X</issn><issn pub-type="epub">2412-8767</issn><publisher><publisher-name>НИТУ "МИСИС"</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1997-308X-2015-2-15-20</article-id><article-id custom-type="elpub" pub-id-type="custom">powder-112</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Теория и процессы формования и спекания порошковых материалов</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Theory and Processes of Formation and Sintering of Powder Materials</subject></subj-group></article-categories><title-group><article-title>Исследование  процесса компактирования нано- и микропорошков карбида кремния в аппарате высокого давления</article-title><trans-title-group xml:lang="en"><trans-title>Investigation into Compacting the Nanopowders and Micropowders of Tungsten Carbide in a High-Pressure Apparatus</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гаршин</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Garshin</surname><given-names>A. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>докт. техн. наук, проф., ст. науч. сотрудник кафедры математики и естественно­научных дисциплин СПбГПУ (195251, г. Санкт-Петербург, ул. Политехническая, 29).</p></bio><bio xml:lang="en"><p>dokt. tekhn. nauk, prof., st. nauch. sotrudnik kafedry matematiki i estestvenno-nauchnykh distsiplin SPbGPU (195251, g. Sankt-Peterburg, ul. Politekhnicheskaya, 29).</p></bio><email xlink:type="simple">apgarshin@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Богданов</surname><given-names>С. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Bogdanov</surname><given-names>S. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>канд. техн. наук, доцент кафедры теоретических основ материаловедения СПбГТИ(ТУ) (119013, г. Санкт-Петербург, Московский пр-т, 26).</p></bio><bio xml:lang="en"><p>kand. tekhn. nauk, dotsent kafedry teoreticheskikh osnov materialovedeniya SPbGTI(TU) (119013, g. Sankt-Peterburg, Moskovskii pr-t, 26)</p></bio><email xlink:type="simple">BogdanovSP@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пономаренко</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Ponomarenko</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>канд. техн. наук, зам. главного технолога ООО «ВИРИАЛ» (194156, г. Санкт-Петербург, пр-т Энгельса, 27)</p></bio><bio xml:lang="en"><p>kand. tekhn. nauk, zam. glavnogo tekhnologa OOO «VIRIAL» (194156, g. Sankt-Peterburg, pr-t Engel'sa, 27)</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Санкт-Петербургский государственный политехнический университет (СПбГПУ)&#13;
Санкт-Петербургский государственный технологический институт (СПбГТИ) (технический университет) ООО «ВИРИАЛ», г. Санкт-Петербург</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2015</year></pub-date><pub-date pub-type="epub"><day>18</day><month>06</month><year>2015</year></pub-date><volume>0</volume><issue>2</issue><fpage>15</fpage><lpage>20</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; НИТУ "МИСИС", 2015</copyright-statement><copyright-year>2015</copyright-year><copyright-holder xml:lang="ru">НИТУ "МИСИС"</copyright-holder><copyright-holder xml:lang="en">НИТУ "МИСИС"</copyright-holder><license xlink:href="https://powder.misis.ru/jour/about/submissions#copyrightNotice" xlink:type="simple"><license-p>https://powder.misis.ru/jour/about/submissions#copyrightNotice</license-p></license></permissions><self-uri xlink:href="https://powder.misis.ru/jour/article/view/112">https://powder.misis.ru/jour/article/view/112</self-uri><abstract><p>Представлены результаты исследования процесса компактирования (спекания) в аппарате высокого давления модели ДО-138 нано- и микропорошков карбида кремния. Режимы компактирования для обоих видов материалов были одинаковы (давление 3,5–4,0 ГПа, температура 1600–1700 °С, время выдержки 10 с). Рассмотрено также влияние плакирования нано- и микропорошков SiC титаном и нитридом титана на свойства компактов (спеков), полученных при тех же режимах спекания. Установлено, что при компактировании нанопорошка карбида кремния получаемые спеки отличаются более высокими плотностью, твердостью и более низкой пористостью по сравнению с образцами из микродисперсного технического карбида кремния. Высокая активность титана по отношению к SiC позволяет химически связать зерна последнего за счет образования между ними промежуточных слоев из соединений титана. В результате образующаяся керамика обладает высокими плотностью, твердостью и износостойкостью. Износостойкость синтезированных композитов на основе нано-SiC в 4,5 раза выше, чем у поликристаллического материала из микропорошка карбида кремния.</p></abstract><trans-abstract xml:lang="en"><p>The results of the investigation into compacting (sintering) in high-pressure apparatus of the DO-138 model of nanopowders and micropowders of silicon carbide are presented. Compacting modes for both types of materials were identical (pressure of 3.5–4.0 GPa, temperature of 1600–1700 °C, and holding time of 10 s). The influence of cladding the SiC nanopowders and micropowders with titanium and titanium nitride on the properties of compacts (cakes) fabricated in the same sintering modes is also considered. It is established that when compacting the silicon carbide nanopowder, the formed cakes differ by the higher density, hardness, and lower porosity compared with the samples of finely dispersed silicon carbide of technical grade. High activity of titanium with respect to SiC allows one to bond chemically the grains of the latter due to the formation of intermediate layers of titanium compounds between them. This is resulted in that the formed ceramics possesses high density, hardness, and wear resistance. Wear resistance of synthesized composites based on nano-SiC is higher by a factor of 4.5 than that one of polycrystalline material made of silicon carbide micropowder.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>нанокарбид кремния</kwd><kwd>микропорошок</kwd><kwd>нанопорошок карбида кремния</kwd><kwd>компактирование</kwd><kwd>спекание</kwd><kwd>нанопокрытие</kwd><kwd>титан</kwd><kwd>нитрид титана</kwd></kwd-group><kwd-group xml:lang="en"><kwd>silicon nanocarbide</kwd><kwd>micropowder</kwd><kwd>silicon carbide nanopowder</kwd><kwd>compaction</kwd><kwd>sintering</kwd><kwd>nanocoating</kwd><kwd>titanium</kwd><kwd>titanium nitride</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Xie Y., Llewellyn R.J., Stiles D. // Wear. 2001. Vol. 250. Р. 88—99.</mixed-citation><mixed-citation xml:lang="en">Xie Y., Llewellyn R.J., Stiles D. // Wear. 2001. Vol. 250. 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